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Casa > prodotti > Componenti elettronici CI > VS-8EWF12STRR-M3

VS-8EWF12STRR-M3

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Description: DIODE GEN PURP 1.2KV 8A D-PAK

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Evidenziare:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 1200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 8 A
Package:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
D-PAK (TO-252AA)
Reverse Recovery Time (trr):
270 ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-40°C ~ 150°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
8A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
8EWF12
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
100 µA @ 1200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 8 A
Package:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
D-PAK (TO-252AA)
Reverse Recovery Time (trr):
270 ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-40°C ~ 150°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
8A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
8EWF12
VS-8EWF12STRR-M3
Diodo 1200 V 8A montato in superficie D-PAK (TO-252AA)