logo
ShenZhen QingFengYuan Technology Co.,Ltd.
prodotti
prodotti

1N914TAP

Dettagli del prodotto

Termini di trasporto & di pagamento

Description: DIODE GEN PURP 100V 300MA DO35

Ottenga il migliore prezzo
Evidenziare:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 75 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1 V @ 10 mA
Package:
Cut Tape (CT) Tape & Box (TB)
Series:
Automotive, AEC-Q101
Capacitance @ Vr, F:
4pF @ 0V, 1MHz
Supplier Device Package:
DO-35 (DO-204AH)
Reverse Recovery Time (trr):
4 ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
DO-204AH, DO-35, Axial
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
300mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
1N914
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
5 µA @ 75 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1 V @ 10 mA
Package:
Cut Tape (CT) Tape & Box (TB)
Series:
Automotive, AEC-Q101
Capacitance @ Vr, F:
4pF @ 0V, 1MHz
Supplier Device Package:
DO-35 (DO-204AH)
Reverse Recovery Time (trr):
4 ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-65°C ~ 175°C
Package / Case:
DO-204AH, DO-35, Axial
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io):
300mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
1N914
1N914TAP
Diodo 100 V 300 mA attraverso foro DO-35 (DO-204AH)